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FQD13N06L Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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FQD13N06L Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 10 page ©2000 Fairchild Semiconductor Corporation FQD13N06L / FQU13N06L Rev. C3 www.fairchildsemi.com 3 ! 2 0 6 4 8 10 0 2 4 6 8 10 12 V DS = 30V V DS = 48V ※ Note: I D = 13.6A Q G, Total Gate Charge [nC] 10 -1 10 0 10 1 0 200 400 600 800 C iss = Cgs + Cgd (Cds = shorted) C gd ds C oss = C + Cgd C rss = ※ Notes: 1. V GS = 0 V 2. f =1MHz C rss C oss C iss 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 -1 10 0 10 1 150℃ ※ Notes: 1. V GS = 0V 2. 250μ sPulseTest 25℃ V SD, Source-Drain voltage [V] 0 0 1 2030 40 0 100 200 300 V GS = 10V V GS = 5V ※ Note : T J = 25 ℃ I D, Drain Current [A] 02 4 6 8 10 10 -1 10 0 10 1 150℃ 25℃ -55℃ ※ Notes: 1. V DS = 25V 2. 250μ sPulseTest 10 -1 10 0 10 1 10 0 10 1 V GS Top: 10.0V 8.0V 6.0V 5.0V 4.5V 4.0V 3.5V Bottom: 3.0V ※ Notes: 1. 250μ sPulseTest 2. T C = 25 ℃ V DS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature V GS, Gate-Source Voltage [V] Figure 2. Transfer Characteristics V DS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics |
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