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FQD13N06L Datasheet(PDF) 3 Page - Fairchild Semiconductor

Part # FQD13N06L
Description  N-Channel QFET짰 MOSFET
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQD13N06L Datasheet(HTML) 3 Page - Fairchild Semiconductor

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©2000 Fairchild Semiconductor Corporation
FQD13N06L / FQU13N06L Rev. C3
www.fairchildsemi.com
3
 !  
2
0
6
4
8
10
0
2
4
6
8
10
12
V
DS = 30V
V
DS = 48V
※
Note: I
D = 13.6A
Q
G, Total Gate Charge [nC]
10
-1
10
0
10
1
0
200
400
600
800
C
iss = Cgs + Cgd (Cds = shorted)
C
gd
ds
C
oss = C + Cgd
C
rss =
※
Notes:
1. V
GS = 0 V
2. f =1MHz
C
rss
C
oss
C
iss
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
-1
10
0
10
1
150℃
※
Notes:
1. V
GS = 0V
2. 250μ sPulseTest
25℃
V
SD, Source-Drain voltage [V]
0
0
1
2030
40
0
100
200
300
V
GS = 10V
V
GS = 5V
※
Note : T
J = 25
℃
I
D, Drain Current [A]
02
4
6
8
10
10
-1
10
0
10
1
150℃
25℃
-55℃
※
Notes:
1. V
DS = 25V
2. 250μ sPulseTest
10
-1
10
0
10
1
10
0
10
1
V
GS
Top:
10.0V
8.0V
6.0V
5.0V
4.5V
4.0V
3.5V
Bottom: 3.0V
※
Notes:
1. 250μ sPulseTest
2. T
C = 25
℃
V
DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
V
GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
V
DS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics


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