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2N6718 Datasheet(PDF) 1 Page - Continental Device India Limited |
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2N6718 Datasheet(HTML) 1 Page - Continental Device India Limited |
1 / 3 page NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N6718 TO-237 Plastic Package General Purpose Medium Power Amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25ºC) DESCRIPTION SYMBOL VALUE UNIT Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCEO 100 V Emitter Base Voltage VEBO 5V Collector Current Continuous IC 1.5 A Total Power Dissipation PD 850 mW Operating And Storage Junction Tj, Tstg -55 to +150 ºC Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT Collector Cut off Current ICBO VCB=80V, IE=0 0.1 µA Emitter Cut off Current IEBO VEB=4V, IC=0 0.1 µA DC Current Gain hFE IC=50mA,VCE=1V 80 IC=250mA,VCE=1V 50 250 IC=500mA,VCE=1V 20 Collector Emitter Saturation Voltage VCE(sat) IC=350mA,IB=35mA 0.35 V Transition Frequency fT VCE=1V, IC=200mA, 50 500 MHz Continental Device India Limited Data Sheet Page 1 of 3 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
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