2N6519 datasheet(1/5 Pages) CDIL

Part #	2N6519

Description	NPN SILICON PLANAR EPITAXIAL TRANSISTORS

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Manufacturer	CDIL [Continental Device India Limited]

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NPN SILICON PLANAR EPITAXIAL TRANSISTORS

2N6515, 2N6519

2N6516, 2N6520

2N6517

TO-92

Plastic Package

HIGH VOLTAGE TRANSISTORS

ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

2N6515 2N6516 2N6517

UNIT

2N6519 2N6520

Collector Emitter Voltage

VCEO

250

300

350

V

Collector Base Voltage

VCBO

250

300

350

V

Emitter Base Voltage

VEBO

NPN-------------------6------------------

V

PNP-------------------5------------------

V

Collector Current Continuous

IC

500

mA

Base Current (Continuous)

IB

250

mA

Total Power Dissipation @ Ta=25ºC

PD

625

mW

Derate Above 25ºC

5.0

mW/ºC

Operating And Storage Junction

Tstg

-55 to +150

ºC

Temperature Range

THERMAL RESISTANCE

Junction to ambient

Rth(j-a)

200

ºC/W

Junction to case

Rth(j-c)

83.3

ºC/W

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

MAX

UNIT

Collector Emitter Breakdown Voltage BVCEO*IC=1mA,IB=0

2N6515

250

V

2N6516, 6519

300

V

2N6517, 6520

350

V

Collector Base Breakdown Voltage

BVCBO IC=100µA,IE=0

2N6515

250

V

2N6516, 6519

300

V

2N6517, 6520

350

V

Emitter Base Breakdown Voltage

BVEBO IE=10µA, IC=0

NPN

6V

PNP

5V

Continental Device India Limited

Data Sheet

Page 1 of 5

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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