MAXIMUM RATINGS

All Ratings: T

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APT11N80KC3

800V 11A

G

D

S

TO-220

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

R

DS(on)

I

DSS

I

GSS

V

GS(th)

UNIT

Volts

Ohms

μA

nA

Volts

MIN

TYP

MAX

800

0.39

0.45

0.5

20

200

±100

2.1

3

3.9

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

Zero Gate Voltage Drain Current (V

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Gate Threshold Voltage (V

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

T

T

L

dt

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Drain-Source Voltage slope (V

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

V/ns

Amps

mJ

APT11N80KC3

800

11

33

±20

±30

156

1.25

-55 to 150

260

50

11

0.2

470

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Microsemi Website - http://www.microsemi.com

• Ultra Low R

DS(ON)

• Low Miller Capacitance

• Avalanche Energy Rated

• Extreme dv/dt Rated

Super Junction MOSFET