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MAAM71200 Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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MAAM71200 Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
1 / 4 page 1 Low Noise GaAs MMIC Power Amplifier 7.5 - 12.0 GHz Rev. V6 MAAM71200 • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Features • Noise Figure: 2.3 dB Typical • Gain: 16.5 dB Typical • Low Bias Current • Single Bias Supply • On-Chip Bias Network • DC Decoupled RF Input and Output Description The MAAM71200 die is a wide-band, low noise, MMIC amplifier. It includes two integrated gain stages and employs series inductive feedback to obtain excellent noise figure and a good, 50 Ω, input and output impedance match over the entire frequency band. The MAAM71200 operates from a single +4 V supply. The MAAM71200 is manufactured in-house using a reliable, 0.5-micron, GaAs MESFET process. This product is 100% RF tested to ensure compliance to performance specifications. Die Ordering Information Part Number Package MAAM71200 Die Absolute Maximum Ratings 1 Parameter Absolute Maximum Voltage +7 V Input Power +20 dBm Operating Temperature -55°C to +125°C Storage Temperature -65°C to +150°C 1. Exceeding any one or combination of these limits may cause permanent damage to this device. Schematic RF IN RF OUT S1a S1b S1c S2a S2b S2c S2d VDD |
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