e

1

0

1

2

3

4

5

6

0.00

0.15

0.30

0.45

0.60

0.75

Input Power (Watts)

f = 960 MHz

Typical Output Power vs. Input Power

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-Emitter Voltage

40

Vdc

Collector-Base Voltage

50

Vdc

Emitter-Base Voltage (collector open)

4.0

Vdc

Collector Current (continuous)

1.7

Adc

Total Device Dissipation at Tflange = 25°C

13.5

Watts

Above 25°C derate by

0.077

W/°C

Storage Temperature Range

–40 to +150

°C

Thermal Resistance (Tflange = 70°C)

13.0

°C/W

PTB 20009

2.5 Watts, 935–960 MHz

Cellular Radio RF Power Transistor

Description

The 20009 is a class AB, NPN, common emitter RF power transistor

intended for 24 Vdc operation across the 935 to 960 MHz frequency

band. Rated at 2.5 Watts minimum output power, it may be used for

both CW and PEP applications. Ion implantation, nitride surface

passivation and gold metallization are used to ensure excellent device

reliability. 100% lot traceability is standard.

Package 20206

20009

LOT

CODE

9/28/98