e

1

0

5

10

15

20

25

30

0.0

0.5

1.0

1.5

2.0

Input Power (Watts)

f = 470 MHz

Typical Output Power vs. Input Power

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-Emitter Voltage

48

Vdc

Collector-Base Voltage

50

Vdc

Emitter-Base Voltage (collector open)

4.0

Vdc

Collector Current (continuous)

6.0

Adc

Total Device Dissipation at Tflange = 25°C

63

Watts

Above 25°C derate by

0.30

W/°C

Storage Temperature Range

T

STG

–40 to +150

°C

Thermal Resistance (Tflange = 70°C)

2.8

°C/W

PTB 20030

15 Watts, 420–470 MHz

RF Power Transistor

Description

The 20030 is a class AB, NPN, common emitter RF power transistor

intended for 24 Vdc operation across the 420 to 470 MHz frequency

band. Rated at 15 watts minimum output power, it may be used for

both CW and PEP applications. Ion implantation, nitride surface

passivation and gold metallization are used to ensure excellent device

reliability. 100% lot traceability is standard.

Package 20201

20030

LOT

CODE

9/28/98