FMMT551TA datasheet(1/2 Pages) FAIRCHILD

Part #	FMMT551TA

Description	SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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SOT23 PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 3 - OCTOBER 1995

FEATURES

* 60 Volt VCEO

* 1 Amp continuous current

COMPLEMENTARY TYPE

FMMT451

PARTMARKING DETAIL

551

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

-80

V

Collector-Emitter Voltage

VCEO

-60

V

Emitter-Base Voltage

VEBO

-5

V

Peak Pulse Current

ICM

-2

A

Continuous Collector Current

IC

-1

A

Base Current

IB

-200

mA

Power Dissipation at Tamb=25°C

Ptot

500

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +200

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C).

PARAMETER

SYMBOL MIN.

MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO

-80

V

IC=-100µA

Collector-Emitter

Sustaining Voltage

VCEO(sus) -60

V

IC=-10mA*

Emitter-Base Breakdown

Voltage

V(BR)EBO

-5

V

IE=-100µA

Collector Cut-Off Current ICBO

-0.1

µ

A

VCB=-60V

Emitter Cut-Off Current

IEBO

-0.1

µ

A

VEB=-4V

Collector-Emitter

Saturation Voltage

VCE(sat)

-0.35

V

IC=-150mA, IB=-15mA*

Base-Emitter

Saturation Voltage

VBE(sat)

-1.1

V

IC=-150mA, IB=-15mA*

Static Forward Current

Transfer Ratio

hFE

50

10

150

IC=-150mA, VCE=-10V*

IC=-1A, VCE=-10V*

Transition

Frequency

fT

150

MHz

IC=-50mA, VCE=-10V

f=100MHz

Output Capacitance

Cobo

25

pF

VCB=-10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

Spice parameter data is available upon request for this device

FMMT551

C

B

E

3 - 130

3 - 129

FMMT551

TYPICAL CHARACTERISTICS

VCE(sat) v IC

I+ -

Collector Current (Amps)

I+ -

Collector Current (Amps)

VBE(on) v IC

-0.6

-0.01

-10

-0.1

-1

-0.7

-0.8

-0.9

-1.0

0

-0.01

-0.1

-10

-1

-0.2

-0.4

-0.6

-0.8

I+/I*=10

I+ -

Collector Current (Amps)

hFE v IC

-0.001

-0.01

-10

-0.1

-1

20

40

60

80

100

I+ -

Collector Current (Amps)

-0.8

-1.0

-1.2

-1.4

-0.01

-0.1

-1

-10

-0.6

VBE(sat) v IC

1

0.1

Safe Operating Area

VCE - Collector Emitter Voltage (V)

10V

100V

1s

DC

100ms

10ms

100µs

1ms

1V

0.01

0.1V

10

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