2

Table 1. Absolute Maximum Ratings [1] at Tc = +25°C

Table 2. Electrical Specifications at Tc = +25°C

Table 3. Typical Parameters at Tc = +25°C

Symbol

Parameter

Unit

Max Rating

Forward Current (1 µs Pulse)

Amp

1

Peak Inverse Voltage

V

100

Junction Temperature

Storage Temperature

-60 to 150

θ

jb

135

Notes:

1. Operation in excess of any one of these conditions may result in permanent damage to the device.

2. Thermal Resistance is measured from junction to board using IR method.

Minimum Breakdown Voltage

Typical Total Resistance

Typical Total Capacitance

50

3.0/1.5*

0.20

Test Conditions

≤ 10uA

f = 100 MHz

f = 1MHz

Series Resistance

RS (Ohm)

Carrier Lifetime

τ (ns)

Reverse Recovery

Total Capacitance

22

500

80

0.20

Test Conditions

f = 100 MHz

90% Recovery

f = 1MHz