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| 2SJ448 |
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 NEC
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2 page 
2SJ448 2 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS Drain to Source On-Resistance RDS(on) 1.5 2.0 VGS = –10 V, ID = –20 A Gate to Source Cutoff Voltage VGS(off) –4.0 –4.8 –5.5 VDS = –10 V, ID = –1 mA Forward Transfer Admittance | yfs | 1.0 2.3 VDS = –10 V, ID = –20 A Drain Leakage Current IDSS –100 VDS = –250 V, VGS = 0 Gate to Source Leakage Current IGSS m10 VGS = m25 V, VDS = 0 Input Capacitance Ciss 470 VDS = –10 V Output Capacitance Coss 200 VGS = 0 Reverse Transfer Capacitance Crss 70 f = 1 MHz Turn-On Delay Time td(on) 13 ID = –2.0 A Rise Time tr 7 VGS(on) = –10 V Turn-Off Delay Time td(off) 34 VDD = –125 V Fall Time tf 10 RG = 10 Ω Total Gate Charge QG 15 ID = –4.0 A Gate to Source Charge QGS 4 VDD = –200 V Gate to Drain Charge QGD 9 VGS = –10 V Body Diode Forward Voltage VF(S-D) 1.0 IF = –4.0 A, VGS = 0 Reverse Recovery Time trr 195 IF = –4.0 A, VGS = 0 Reverse Recovery Charge Qrr 760 di/dt = 50 A/ µs UNIT Ω V S µA µA pF pF pF ns ns ns ns nC nC nC V ns nC The application circuits and their parameters are for references only and are not intended for use in actual design-in's. Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time RG = 25 Ω 50 Ω PG L VDD VGS = –20 → 0 V BVDSS IAS ID VDS Starting Tch RG = 10 Ω D.U.T. PG. 0 t RL VDD VGS t = 1 s Duty Cycle ≤ 1 % ID 0 0 10 % 10 % 90 % 90 % 10 % 90 % ID VGS (on) td (off) td (on) ton toff tf tr Test Circuit 3 Gate Charge D.U.T. RL VDD 50 Ω IG = –2 mA PG. VDD VGS RG D.U.T. VGS Wave Form ID Wave Form µ |
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