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M1FL40U Datasheet(PDF) 2 Page - Shindengen Electric Mfg.Co.Ltd |
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M1FL40U Datasheet(HTML) 2 Page - Shindengen Electric Mfg.Co.Ltd |
2 / 4 page (J532-P〈2010. 07〉) www. s hi ndengen. co. j p/ pr oduct / s emi / ■特性図 CHARACTERI STI C DI AGRAMS 順方向特性 Forward Voltage 5 2 0. 1 0. 2 0. 5 1 0 0. 4 0. 82 2.4 2. 8 1. 6 1.2 Tl=175℃(MAX) Tl=175℃(TYP) Tl= 25℃(MAX) Tl= 25℃(TYP) せん頭サージ順電流耐量 Peak Surge Forward Current Capability 順電力損失曲線 Forward Power Dissipation 40 20 10 25 30 35 15 5 01 100 10 1cycle 10ms10ms Sine wave Non-repetitive Tj=25℃ DC D=0. 8 0. 5 0. 3 0. 2 0. 1 0. 05 SIN DC D=0. 8 0. 5 0. 3 0. 2 0. 1 0. 05 SIN 接合容量 Junction Capacitance 0 0.4 0.2 0.6 0.8 1.2 1 f=1MHz Tl=25℃ TYP Tj=175℃ D=tp/T T tp 0 IO Pulse measurement ディレーティングカーブ Ta-Io Derating Curve Ta-Io ディレーティングカーブ Tc-Io Derating Curve Tc-Io 0 20 40 60 80 100 160 180 140 120 DC D=0. 8 0. 5 SIN 0. 3 0. 2 0. 1 0. 05 DC D=0. 8 0. 5 SIN 0. 3 0. 2 0. 1 0. 05 D=tp/T VR=VRM T tp 0 0 IO VR 100 1 10 50 5 20 2 1 400 100 10 2 200 20 5 50 0 0.4 0.2 0.6 0.8 1.8 1.6 1.4 1.2 1 ディレーティングカーブ Ta-Io Derating Curve Ta-Io 0 20 40 60 80 100 160 180 140 120 DC D=0. 8 0. 5 SIN 0. 3 0. 2 0. 1 0. 05 DC D=0. 8 0. 5 SIN 0. 3 0. 2 0. 1 0. 05 D=tp/T VR=VRM T tp 0 0 IO VR 0 20 40 60 80 100 160 180 140 120 DC D=0. 8 0. 5 SIN 0. 3 0. 2 0. 1 0. 05 DC D=0. 8 0. 5 SIN 0. 3 0. 2 0. 1 0. 05 D=tp/T VR=VRM T tp 0 0 IO VR D=tp/T VR=VRM T tp 0 0 IO VR せん頭サージ順電流耐量 Peak Surge Forward Current Capability 100 60 80 40 20 01 10 5 2 TTjj= =2 25 5℃ ℃ Tj=25℃ せん頭サージ順電流減少率─接合部温度 Peak Surge Forward Current Derating vs Junction Temperature 100 60 80 40 20 01150 50 75 100 125 25 ディレーティングカーブ Tl -Io Derating Curve Tl -Io 0 0.5 2.5 2 1.5 1 0 20 40 60 80 100 160 180 140 120 DC D=0. 8 0. 5 SIN 0. 3 0. 2 0. 1 0. 05 DC D=0. 8 0. 5 SIN 0. 3 0. 2 0. 1 0. 05 Forward Voltage VF〔V〕 Average Rectified Forward Current IO〔A〕 Number of Cycles 〔cycle〕 Reverse Voltage VR〔V〕 Ambient Temperature Ta 〔℃〕 Case Temperature Tc 〔℃〕 On glass-epoxy substrate Soldering land2mm Conductor layer 35μm Ambient Temperature Ta 〔℃〕 On alumina substrate Soldering land2mm Conductor layer 20μm Substrate thickness 0.64t tp Sine wave Non-repetitive Pulse Width tp〔ms〕 Junction Temperature Tj〔℃〕 Lead Temperature Tl 〔℃〕 M1FL40U *Si newaveは50Hzで測定しています。 *50Hzsi newavei susedf ormeasur ement s. |
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