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FQD7P06TM Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FQD7P06TM Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page April 2013 ©2001 Fairchild Semiconductor Corporation FQD7P06 Rev. C0 www.fairchildsemi.com 1 FQD7P06 P-Channel QFET® MOSFET - 60 V, - 5.4 A, 450 m Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • - 5.4 A, - 60 V, RDS(on) = 450 m (Max.) @ VGS = - 10 V, ID = - 2.7 A • Low Gate Charge (Typ. 6.3 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter FQD7P06 Unit VDSS Drain-Source Voltage -60 V ID Drain Current - Continuous (TC = 25°C) -5.4 A - Continuous (TC = 100°C) -3.42 A IDM Drain Current - Pulsed (Note 1) -21.6 A VGSS Gate-Source Voltage 25 V EAS Single Pulsed Avalanche Energy (Note 2) 90 mJ IAR Avalanche Current (Note 1) -5.4 A EAR Repetitive Avalanche Energy (Note 1) 2.8 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) -7.0 V/ns PD Power Dissipation (TA = 25°C) * 2.5 W Power Dissipation (TC = 25°C) 28 W - Derate above 25°C 0.22 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter FQD7P06 Unit RJC Thermal Resistance, Junction-to-Case, Max. 4.5 °C/W RJA Thermal Resistance, Junction-to-Ambient * 50 °C/W RJA Thermal Resistance, Junction-to-Ambient, Max. 110 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ● ● ● ▲ ▶ ● ● ● ▲ ▶ S D G S D G D-PAK |
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