Filtronic

LP6836P100

Solid State

Packaged 0.25W Power PHEMT

Phone: (408) 988-1845

Internet: http://www.filtronicsolidstate.com

Fax: (408) 970-9950

FEATURES

DESCRIPTION AND APPLICATIONS

The LP6836P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic

High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25

µm by 360 µm Schottky barrier

gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.

The epitaxial

structure and processing have been optimized for reliable high-power applications.

Typical applications include commercial and military high-performance power amplifiers, including SATCOM uplink

transmitters, and medium-haul digital radio transmitters.

The LP6836P100 may be procured in a variety of grades, depending upon specific user requirements.

Standard lot

screening is patterned after MIL-STD-19500, JANC grade. Space level screening to FSS JANS grade is also available.

°C)

SYMBOLS

PARAMETERS

MIN

TYP

MAX

UNITS

Saturated Drain-Source Current

LP6836-P100-1 Blue

LP6836-P100-2 Green

LP6836-P100-3 Red

80

96

106

90

100

115

95

105

125

mA

Output Power at 1dB Gain Compression

23.5

24.5

dBm

Power Gain at 1dB Gain Compression

8.5

9.5

dB

η

ADD

Power-Added Efficiency

55

%

Maximum Drain-Source Current

190

mA

Transconductance

70

95

mS

Pinch-Off Voltage

-0.25

-0.8

-1.5

V

Gate-Source Leakage Current

1

15

µA

Gate-Source Breakdown Voltage

-11

-15

V

Gate-Drain Breakdown Voltage

-12

-16

V

Get Package Model

DSS-031 WF

DRAIN

GATE

SOURCE