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IRL520S Datasheet(PDF) 1 Page - Vishay Siliconix |
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IRL520S Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 90382 www.vishay.com S-Pending-Rev. A, 14-Jan-09 WORK-IN-PROGRESS 1 Power MOSFET IRL520S, SiHL520S Vishay Siliconix FEATURES • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive •RDS (on) Specified at VGS = 4 V and 5 V • 175°C Operating Temperature DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 3.0 mH, RG = 25 Ω, IAS = 9.2 A (see fig. 12). c. ISD ≤ 9.2 A, dI/dt ≤ 110 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω)VGS = 5 V 0.27 Qg (Max.) (nC) 12 Qgs (nC) 3.0 Qgd (nC) 7.1 Configuration Single N-Channel MOSFET G D S D2PAK (TO-263) G D S ORDERING INFORMATION Package D2PAK (TO-263) SnPb IRL520S SiHL520S ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 10 Continuous Drain Current VGS at 5 V TC = 25 °C ID 9.2 A TC = 100 °C 6.5 Pulsed Drain Currenta IDM 36 Linear Derating Factor 0.40 W/°C Linear Derating Factor (PCB Mount)e 0.025 Single Pulse Avalanche Energyb EAS 170 mJ Avalanche Currenta IAR 9.2 A Repetiitive Avalanche Energya EAR 6.0 mJ Maximum Power Dissipation TC = 25 °C PD 60 W Maximum Power Dissipation (PCB Mount)e TA = 25 °C 3.7 Peak Diode Recovery dV/dtc dV/dt 5.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C Soldering Recommendations (Peak Temperature) for 10 s 300d |
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