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IFN5912 Datasheet(PDF) 1 Page - InterFET Corporation |
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IFN5912 Datasheet(HTML) 1 Page - InterFET Corporation |
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1 / 1 page 01/99 B-47 IFN5911, IFN5912 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C Continuous Forward Gate Current 50 mA Continuous Device Power Dissipation 500 mW Power Derating 4 mW/°C Storage Temperature Range – 65°C to 200°C TOÐ78 Package See Section G for Outline Dimensions Pin Configuration 1 Source, 2 Drain, 3 Gate, 4 Case, 5 Source, 6 Drain, 7 Gate, 8 Omitted At 25°C free air temperature: IFN5911 IFN5912 Process NJ30L or NJ36D Static Electrical Characteristics Min Max Min Max Unit Test Conditions Gate Source Breakdown Voltage V(BR)GSS – 25 – 25 V IG = – 1 µA, VDS = ØV Gate Reverse Current IGSS – 100 – 100 pA VGS = – 15V, VDS = ØV – 250 – 250 nA VGS = – 15V, VDS = ØV TA = 150°C Gate Operating Current IG – 100 – 100 pA VDG = 10V, ID = 5 mA – 100 – 100 nA VDG = 10V, ID = 5 mA TA = 125°C Gate Source Cutoff Voltage VGS(OFF) – 1– 5– 1– 5 V VDS = 10V, ID = 1 nA Gate Source Voltage VGS – 0.3 – 4 – 0.3 – 4 V VDS = 10V, ID = 5 mA Drain Saturation Current (Pulsed) IDSS 740740 mA VDS = 10V, VGS = ØV Dynamic Electrical Characteristics Common Source gfs 3000 10000 3000 10000 µS VDG = 10V, ID = 5 mA f = 1 kHz Forward Transconductance 3000 10000 3000 10000 µS VDG = 10V, ID = 5 mA f = 100 MHz Common Source gos 100 100 µS VDG = 10V, ID = 5 mA f = 1 kHz Output Conductance 150 150 µS VDG = 10V, ID = 5 mA f = 100 MHz Common Source Input Capacitance Ciss 55 pF VDG = 10V, ID = 5 mA f = 1 MHz Common Source Crss 1.2 1.2 pF VDG = 10V, ID = 5 mA f = 1 MHz Reverse Transfer Capacitance Equivalent Short Circuit ¯eN 20 20 nV/ √Hz VDG = 10V, ID = 5 mA f = 10 kHz Input Noise Voltage Noise Figure NF 1 1 dB VDG = 10V, ID = 5 mA f = 10 Hz RG = 100 KΩ Differential Gate Current |IG1|–|IG2|20 20 nA VDG = 10V, ID = 5 mA TA = 125°C Saturation Drain Current Ratio IDSS1/IDSS2 0.95 1 0.95 1 VDS = 10V, VGS = ØV Differential Gate Source Voltage VGS1 –VGS2 10 15 mV VDG = 10V, ID = 5 mA ∆VGS1 –VGS2 20 40 µV/°C VDG = 10V, ID = 5 mA TA = 25°C Gate Source Voltage ∆T TB = 125°C Differential Drift ∆VGS1 –VGS2 20 40 µV/°C VDG = 10V, ID = 5 mA TA = – 55°C ∆T TB = 25°C Transconductance Ratio gfs1 /gfs2 0.95 1 0.95 1 VDG = 10V, ID = 5 mA f = 1 kHz ¥ VHF Amplifiers ¥ Wideband Differential Amplifiers 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com Databook.fxp 1/14/99 11:32 AM Page B-47 |
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