01/99

B-47

IFN5911, IFN5912

N-Channel Dual Silicon Junction Field-Effect Transistor

Continuous Forward Gate Current

50 mA

Continuous Device Power Dissipation

500 mW

Power Derating

4 mW/°C

Storage Temperature Range

– 65°C to 200°C

TOÐ78 Package

See Section G for Outline Dimensions

Pin Configuration

1 Source, 2 Drain, 3 Gate, 4 Case,

5 Source, 6 Drain, 7 Gate, 8 Omitted

At 25°C free air temperature:

IFN5911

IFN5912

Process NJ30L or NJ36D

Static Electrical Characteristics

Min

Max

Min

Max

Unit

Test Conditions

Gate Source Breakdown Voltage

– 25

– 25

V

Gate Reverse Current

– 100

– 100

pA

– 250

– 250

nA

Gate Operating Current

– 100

– 100

pA

– 100

– 100

nA

Gate Source Cutoff Voltage

– 1– 5– 1– 5

V

Gate Source Voltage

– 0.3

– 4

– 0.3

– 4

V

Drain Saturation Current (Pulsed)

740740

mA

Dynamic Electrical Characteristics

Common Source

3000 10000 3000 10000

µS

f = 1 kHz

Forward Transconductance

3000 10000 3000 10000

µS

f = 100 MHz

Common Source

100

100

µS

f = 1 kHz

Output Conductance

150

150

µS

f = 100 MHz

Common Source Input Capacitance

55

pF

f = 1 MHz

Common Source

1.2

1.2

pF

f = 1 MHz

Reverse Transfer Capacitance

Equivalent Short Circuit

20

20

nV/

√Hz

f = 10 kHz

Input Noise Voltage

Noise Figure

NF

1

1

dB

f = 10 Hz

Differential Gate Current

20

nA

Saturation Drain Current Ratio

1

0.95

1

Differential Gate Source Voltage

10

15

mV

20

40

µV/°C

Gate Source Voltage

∆T

Differential Drift

20

40

µV/°C

∆T

Transconductance Ratio

0.95

1

0.95

1

f = 1 kHz

¥ VHF Amplifiers

¥ Wideband Differential

Amplifiers

1000 N. Shiloh Road, Garland, TX 75042

www.interfet.com

Databook.fxp

1/14/99 11:32 AM

Page B-47