FQB8N60C datasheet(4/9 Pages) FAIRCHILD

Part #	FQB8N60C

Description	N-Channel QFET짰 MOSFET 600 V, 7.5 A, 1.2 廓

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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FQB8N60C / FQI8N60C Rev. C1

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4

Typical Characteristics (Continued)

10

0

10

1

10

2

10

3

10

-2

10

-1

10

0

10

1

10

2

100 ms

1 ms

10

µs

DC

10 ms

100

µs

Operation in This Area

is Limited by R

DS(on)

※ Notes :

1. T

C = 25

o

C

2. T

J = 150

o

C

3. Single Pulse

V

DS, Drain-Source Voltage [V]

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs Case Temperature

Figure 7. Breakdown Voltage Variation

vs Temperature

-100

-50

0

50

100

150

200

0.8

0.9

1.0

1.1

1.2

※Notes:

1. V

GS = 0 V

2. I

D = 250

μA

T

J

, Junction Temperature [

o

C]

-100

-50

0

50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

※ Notes :

1. V

GS = 10 V

2. I

D = 4 A

T

J, Junction Temperature [

o

C]

25

50

75

100

125

150

0

2

4

6

8

T

C, Case Temperature [

℃]

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-2

10

-1

10

0

※ No te s :

1 . Z

θ JC (t ) = 0 . 8 5

℃ /W M a x .

2 . D u ty F a c to r, D = t

1 /t 2

3 . T

JM - T C =

P

DM

Z

*

θ JC (t )

s in g le p u ls e

D= 0 . 5

0. 02

0. 2

0. 05

0. 1

0. 01

t

1 , S q uar e

W a v e P uls e D ur atio n [s ec ]

Figure 11. Transient Thermal Response Curve

t

1

PDM

t2

Figure 8. On-Resistance Variation

vs Temperature

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