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FQB8P10 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FQB8P10 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 8 page  Package Marking and Ordering Information ©2000 Fairchild Semiconductor Corporation FQB8P10 Rev. C1 www.fairchildsemi.com 2 Part Number Top Mark Package Reel Size Tape Width Quantity FQB8P10 FQB8P10TM D2-PAK 330 mm 24 mm 800 units Packing Method Tape and Reel Electrical Characteristics T C = 25°C unless otherwise noted. Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 3.5 mH, IAS = -8.0 A, VDD = -25 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ -8.0 A, di/dt ≤ 300 A/µs , VDD ≤ BVDSS, starting TJ = 25°C . 4. Essentially independent of operating temperature. (Note 4 ) (Note 4 ) Symbol Parameter Test Conditions Min . Typ . Max . Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 μA -100 -- -- V ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = -250 μA, Referenced to 25°C -- -0.1 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = -100 V, VGS = 0 V -- -- -1 μA VDS = -80 V, TC = 150°C -- -- -10 μA IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 μA -2.0 -- -4.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -4.0 A -- 0.41 0.53 Ω gFS Forward Transconductance VDS = -40 V, ID = -4.0 A -- 4.3 -- S Dynamic Characteristics Ciss Input Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz -- 360 470 pF Coss Output Capacitance -- 120 155 pF Crss Reverse Transfer Capacitance -- 30 40 pF Switching Characteristics td(on) Turn-On Delay Time VDD = -50 V, ID = -8.0 A, RG = 25 Ω -- 11 30 ns tr Turn-On Rise Time -- 110 230 ns td(off) Turn-Off Delay Time -- 20 50 ns tf Turn-Off Fall Time -- 35 80 ns Qg Total Gate Charge VDS = -80 V, ID = -8.0 A, VGS = -10 V -- 12 15 nC Qgs Gate-Source Charge -- 3.0 -- nC Qgd Gate-Drain Charge -- 6.4 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -8.0 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -32 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -8.0 A -- -- -4.0 V trr Reverse Recovery Time VGS = 0 V, IS = -8.0 A, dIF / dt = 100 A/μs -- 98 -- ns Qrr Reverse Recovery Charge -- 0.35 -- μC |
Similar Part No. - FQB8P10 |
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Similar Description - FQB8P10 |
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