NDF02N60ZG datasheet(2/10 Pages) ONSEMI

Part #	NDF02N60ZG

Description	N-Channel Power MOSFET 600 V, 4.8

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Manufacturer	ONSEMI [ON Semiconductor]

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NDF02N60Z, NDD02N60Z

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THERMAL RESISTANCE

Parameter

Symbol

Value

Unit

Junction−to−Case (Drain)

NDF02N60Z

NDD02N60Z

RqJC

4.9

2.2

°C/W

Junction−to−Ambient Steady State

(Note 3) NDF02N60Z

(Note 4) NDD02N60Z

(Note 3) NDD02N60Z−1

RqJA

51

41

80

3. Insertion mounted

4. Surface mounted on FR4 board using 1″ sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces).

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Test Conditions

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

VGS = 0 V, ID = 1 mA

BVDSS

600

V

Breakdown Voltage Temperature Coeffi-

cient

Reference to 25°C,

ID = 1 mA

DBVDSS/

DTJ

0.6

V/°C

Drain−to−Source Leakage Current

VDS = 600 V, VGS = 0 V

25°C

IDSS

1

mA

150°C

50

Gate−to−Source Forward Leakage

VGS = ±20 V

IGSS

±10

mA

ON CHARACTERISTICS (Note 5)

Static Drain−to−Source On−Resistance

VGS = 10 V, ID = 1.0 A

RDS(on)

4.0

4.8

W

Gate Threshold Voltage

VDS = VGS, ID = 50 mA

VGS(th)

3.0

4.0

4.5

V

Forward Transconductance

VDS = 15 V, ID = 1.2 A

gFS

1.7

S

DYNAMIC CHARACTERISTICS

Input Capacitance (Note 6)

VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

Ciss

215

274

325

pF

Output Capacitance (Note 6)

Coss

25

34

45

Reverse Transfer Capacitance (Note 6)

Crss

4.0

7.0

10

Total Gate Charge (Note 6)

VDD = 300 V, ID = 2.4 A,

VGS = 10 V

Qg

5.0

10

16

nC

Gate−to−Source Charge (Note 6)

Qgs

1.5

2.4

4.0

Gate−to−Drain (“Miller”) Charge (Note 6)

Qgd

3.5

5.3

8.0

Plateau Voltage

VGP

6.4

V

Gate Resistance

Rg

4.9

W

RESISTIVE SWITCHING CHARACTERISTICS

Turn−On Delay Time

VDD = 300 V, ID = 2.4 A,

VGS = 10 V, RG = 5 W

td(on)

9.0

ns

Rise Time

tr

7.0

Turn−Off Delay Time

td(off)

15

Fall Time

tf

7.0

SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)

Diode Forward Voltage

IS = 2.4 A, VGS = 0 V

VSD

1.6

V

Reverse Recovery Time

VGS = 0 V, VDD = 30 V

IS = 2.4 A, di/dt = 100 A/ms

trr

240

ns

Reverse Recovery Charge

Qrr

0.7

mC

5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.

6. Guaranteed by design.

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