NTLGF3501NT2G datasheet(3/8 Pages) ONSEMI

Part #	NTLGF3501NT2G

Description	Power MOSFET and Schottky Diode

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Manufacturer	ONSEMI [ON Semiconductor]

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NTLGF3501N

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MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V, IS = 1.7 A

TJ = 25°C

0.8

1.15

V

TJ = 150°C

0.63

V

Reverse Recovery Time

tRR

VGS = 0 V, IS = 1.0 A ,

dIS/dt = 100 A/ms

12

ns

Charge Time

ta

8.0

Discharge Time

tb

4.0

Reverse Recovery Charge

QRR

5.0

nC

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Maximum Instantaneous

Forward Voltage

VF

IF = 0.1 A

0.32

0.34

V

IF = 1.0 A

0.36

0.39

Maximum Instantaneous

Reverse Current

IR

VR = 5.0 V

100

mA

VR = 5 V, TJ = 100°C

12

mA

VR = 10 V

70

mA

VR = 20 V

255

6. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2%.

7. Switching characteristics are independent of operating junction temperatures.

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