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SIHF630S Datasheet(PDF) 5 Page - Vishay Siliconix |
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SIHF630S Datasheet(HTML) 5 Page - Vishay Siliconix |
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5 / 9 page  Document Number: 91032 www.vishay.com S11-1047-Rev. C, 30-May-11 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF630S, SiHF630S Vishay Siliconix Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms 101 100 VSD, Source-to-Drain Voltage (V) 0.5 1.3 1.1 0.9 0.7 25 °C 150 °C V GS = 0 V 91032_07 1.5 10 µs 100 µs 1 ms 10 ms Operation in this area limited by R DS(on) VDS, Drain-to-Source Voltage (V) T C = 25 °C T J = 150 °C Single Pulse 103 102 0.1 2 5 0.1 2 5 1 2 5 10 2 5 25 1 25 10 25 102 25 103 25 104 91032_08 TC, Case Temperature (°C) 0 2 4 6 8 10 25 150 125 100 75 50 91032_09 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % R D V GS R g D.U.T. 10 V + - V DS V DD V DS 90 % 10 % V GS t d(on) t r t d(off) t f |
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