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Visit www.macom.com for additional data sheets and product information.

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information contained herein without notice.

Non Magnetic MELF PIN Diode

Rev. V2

MA4P7470F-1072T

ADVANCED:

Data Sheets contain information regarding a product M/A-COM is considering for

development. Performance is based on target specifications, simulated results, and/or prototype

measurements. Commitment to develop is not guaranteed.

PRELIMINARY:

Data Sheets contain information regarding a product M/A-COM has under

development. Performance is based on engineering tests. Specifications are typical. Mechanical

outline has been fixed. Engineering samples and/or test data may be available. Commitment to

produce in volume is not guaranteed.

Designed for Automated Assembly

Features

• Non-Magnetic Package Suitable for MRI

Applications

• Rectangular MELF SMQ Ceramic Package

• Hermetically Sealed

• Low Rs for Low Insertion Loss

• Long τ

• Low Cj for High Series Isolation

• High Average Incident Power Handling

Capability

• RoHS Compliant

Description and Applications

The MA4P7470F-1072T is a surface mountable

PIN diode in a non-magnetic Metal Electrode

L

eadless Faced (MELF) package. The device

incorporates M/A-COM Technology Solutions time

proven HIPAX technology to produce a low

inductance ceramic package with no ribbons or

whisker wires. The package utilizes M/A-COM

Technology Solutions new non-magnetic plating

process to provide a hermetically sealed package

with extremely low permeability. Incorporated within

the package is a glass passivated PIN chip that is

full face bonded on both the cathode and anode to

maximize surface area for low electrical and

thermal resistance. The low thermal resistance

provides excellent performance at high incident

power levels of up to 200 watts CW. The

MA4P7470F-1072T has been comprehensively

characterized both electrically and mechanically to

ensure repeatable and predictable performance.

The MA4P7470F-1072T is a non-magnetic device

which has similar electrical performance to its

magnetic counterpart the MA4P7417F-1072T. The

diode is well suited for use in low loss, low

distortion, high power switching circuits. It was

designed to be used in a high magnetic field

environment from HF through UHF frequencies.

This device is designed to meet the most rigorous

electrical and mechanical requirements of MRI

environments.

MELF PIN diodes are designed for high volume tape

and reel assembly. The rectangular package design

is excellent for automatic pick and place assembly

methods. The parallel flat surfaces are suitable for

key jaw or vacuum pickup techniques. All solderable

surfaces are tin plated and compatible with industry

standard reflow and vapor phase soldering methods.

Absolute Maximum Ratings

Parameter

Absolute Maximum

Operating Temperature

-65°C to +125°C

Storage Temperature

-65°C to +150°C

Chip Junction Temperature

+175°C Continuous

Diode Mounting Temperature

+265°C for 10 seconds

Forward D.C. Current

+150 mA

Reverse D.C. Voltage @ -10uA

- 800V

RF C.W. Incident Power

+53dBm C.W.

1. Exceeding any of these limits may cause permanent

damage.