VN2450 datasheet(2/6 Pages) SUTEX

Part #	VN2450

Description	N-Channel Enhancement-Mode Vertical DMOS FETs

Download	6 Pages

Scroll/Zoom	100%

Manufacturer	SUTEX [Supertex, Inc]

Direct Link	http://www.supertex.com

Logo

2 / 6 page

2

VN2450

● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

Thermal Characteristics

Package

I

D

(continuous)*

(mA)

I

D

(pulsed)

(mA)

Power Dissipation

@T

A = 25

O

C

(W)

θ

jc

(OC/W)

θ

ja

(OC/W)

I

DR

†

(mA)

I

DRM

(mA)

TO-92

200

650

0.74

125

170

200

650

TO-243AA

250

750

1.6

‡

15

78

‡

250

750

Notes:

† I

D (continuous) is limited by max rated TJ,

‡ Mounted on FR5 board, 25mm x 25mm x 1.57mm.

Electrical Characteristics (T

A = 25°C unless otherwise speciﬁed)

Sym

Parameter

Min

Typ

Max

Units Conditions

BV

DSS

Drain-to-source breakdown voltage

500

-

V

GS = 0V, ID = 2.0mA

V

GS(th)

Gate threshold voltage

1.5

-

4.0

V

GS = VDS, ID = 1.0mA

ΔV

GS(th)

Change in V

GS(th) with temperature

-

-5.5

mV/OC V

GS = VDS, ID = 1.0mA

I

GSS

Gate body leakage current

-

100

nA

V

GS = ±20V, VDS = 0V

I

DSS

Zero gate voltage drain current

-

10

µA

V

GS = 0V,

V

DS = Max Rating

-

1.0

mA

V

DS = 0.8 Max Rating,

V

GS = 0V, TA = 125

O

C

I

D(ON)

On-state drain current

0.5

-

A

V

GS = 10V, VDS = 25V

R

DS(ON)

Static drain-to-source on-state resistance

-

20

Ω

V

GS = 4.5V, ID = 100mA

-

13

V

GS = 10V, ID = 400mA

ΔR

DS(ON)

Change in R

DS(ON) with temperature

-

1.7

%/OC

V

GS = 10V, ID = 400mA

G

FS

Forward transconductance

50

-

mmho V

DS = 25V, ID = 200mA

C

ISS

Input capacitance

-

150

pF

V

GS = 0V,

V

DS = 25V,

f = 1.0MHz

C

OSS

Common source output capacitance

-

50

C

RSS

Reverse transfer capacitance

-

25

t

d(ON)

Turn-on delay time

-

10

ns

V

DD = 25V,

I

D = 250mA,

R

GEN = 25Ω

t

r

Rise time

-

10

t

d(OFF)

Turn-off delay time

-

25

t

f

Fall time

-

20

V

SD

Diode forward voltage drop

-

1.5

V

GS = 0V, ISD = 400mA

Notes:

All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

All A.C. parameters sample tested.

1.

2.

Switching Waveforms and Test Circuit

90%

10%

90%

10%

PULSE

GENERATOR

VDD

RL

OUTPUT

D.U.T.

t(ON)

td(ON)

t(OFF)

td(OFF)

tF

tr

INPUT

OUTPUT

10V

VDD

RGEN

0V

Similar Part No. - VN2450

Manufacturer	Part #	Datasheet	Description
Supertex, Inc	VN2450	457Kb / 4P	N-Channel Enhancement-Mode Vertical DMOS FETs
	VN2450N3	457Kb / 4P	N-Channel Enhancement-Mode Vertical DMOS FETs
	VN2450N8	457Kb / 4P	N-Channel Enhancement-Mode Vertical DMOS FETs
	VN2450NW	457Kb / 4P	N-Channel Enhancement-Mode Vertical DMOS FETs

More results

Similar Description - VN2450

Manufacturer	Part #	Datasheet	Description
Supertex, Inc	TN5325	446Kb / 2P	N-Channel Enhancement-Mode Vertical DMOS FETs
	TN2501	476Kb / 4P	N-Channel Enhancement-Mode Vertical DMOS FETs
	VN0606	434Kb / 2P	N-Channel Enhancement-Mode Vertical DMOS FETs
	VN4012	446Kb / 2P	N-Channel Enhancement-Mode Vertical DMOS FETs
	VN2406	442Kb / 2P	N-Channel Enhancement-Mode Vertical DMOS FETs
	VN3515L	441Kb / 2P	N-Channel Enhancement-Mode Vertical DMOS FETs
	VN2110K1-G	472Kb / 5P	N-Channel Enhancement-Mode Vertical DMOS FETs
	VN3205N3-G	728Kb / 6P	N-Channel Enhancement-Mode Vertical DMOS FETs
	2N7000	666Kb / 5P	N-Channel Enhancement-Mode Vertical DMOS FETs
	VN1306	28Kb / 4P	N-Channel Enhancement-Mode Vertical DMOS FETs

More results

VN2450 Datasheet(PDF) 2 Page - Supertex, Inc

VN2450 Datasheet(HTML) 2 Page - Supertex, Inc

Similar Part No. - VN2450

Similar Description - VN2450

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL