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BD176PNP Datasheet(PDF) 1 Page - Continental Device India Limited |
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BD176PNP Datasheet(HTML) 1 Page - Continental Device India Limited |
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1 / 3 page  EPITAXIAL SILICON POWER TRANSISTORS BD175 BD176 BD177 BD178 BD179 BD180 NPN PNP TO126 Plastic Package Intended for use in Medium Power Linear Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD175 BD177 UNIT BD176 BD178 Collector -Emitter Voltage VCEO 45 60 V Collector -Base Voltage VCBO 45 60 V Emitter Base Voltage VEBO 5.0 V Collector Current IC 3.0 A Collector Peak Current ICM 7.0 A Power Dissipation @ Ta=25ºC PD 1.25 W Derate above 25ºC 10 mW/ºC Power Dissipation @ Tc=25ºC PD 30 W Operating and Storage Junction Temperature Range Tj, Tstg - 65 to +150 ºC THERMAL CHARACTERISTICS Junction to Ambient in free air Rth (j-a) ºC/W Junction to Case Rth (j-c) ºC/W ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT Collector Cut off Current ICBO VCB=45V, IE=0 BD175/76 100 µA VCB=60V, IE=0 BD177/78 100 µA VCB=80V, IE=0 BD179/80 100 µA Emitter Cut off Current IEBO VEB=5V, IC=0 1.0 mA Collector Emitter Sustaining Voltage *VCEO (sus) IC=100mA, IB=0 BD175/76 45 V BD177/78 60 V BD179/80 80 V Collector Emitter Saturation Voltage *VCE (sat) IC=1A, IB=0.1A 0.8 V Base Emitter on Voltage *VBE (on) IC=1A, VCE=2V 1.3 V DC Current Gain *hFE IC=150mA, VCE=2V 40 IC=1A, VCE=2V 15 *hFE Group IC=150mA, VCE=2V - 6 40 100 - 10 63 160 Only BD175/76/79 - 16 100 250 Transition Frequency fT IC=250mA, VCE=10V 3.0 ΜΗz *Pulse test:- Pulse width=300 µµs, Duty cycle=1.5% 100 4.16 BD179 80 80 BD180 B C E Continental Device India Limited Data Sheet Page 1 of 3 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
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