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SFWI9520 Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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SFWI9520 Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 7 page SFW/I9520 10 -1 10 0 10 1 10 -1 10 0 10 1 @ Notes : 1. 250 µs Pulse Test 2. T C = 25 oC V GS Top : - 15V - 10 V - 8.0 V - 7.0 V - 6.0 V - 5.5V - 5.0 V Bottom : - 4.5V -V DS , Drain-Source Voltage [V] 24 68 10 10 -1 10 0 10 1 25 oC 175 oC - 55 oC @ Notes : 1. V GS = 0 V 2. V DS = -40 V 3. 250 µs Pulse Test -V GS , Gate-Source Voltage [V] 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 -1 10 0 10 1 175 oC 25 oC @ Notes : 1. V GS = 0 V 2. 250 µs Pulse Test -V SD , Source-Drain Voltage [V] 10 0 10 1 0 200 400 600 800 C iss= Cgs+ Cgd ( Cds= shorted ) C oss= Cds+ Cgd C rss= Cgd @ Notes : 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss -V DS , Drain-Source Voltage [V] 0 4 8 12 162024 0.0 0.5 1.0 1.5 2.0 2.5 @ Note : T J = 25 oC V GS = -20 V V GS = -10 V -I D , Drain Current [A] 0 3 6 9 12 15 18 0 5 10 V DS = -80 V V DS = -50 V V DS = -20 V @ Notes : I D =-6.0 A Q G , Total Gate Charge [nC] P-CHANNEL POWER MOSFET Fig 1. Output Characteristics Fig 2. Transfer Characteristics Fig 6. Gate Charge vs. Gate-Source Voltage Fig 5. Capacitance vs. Drain-Source Voltage Fig 4. Source-Drain Diode Forward Voltage Fig 3. On-Resistance vs. Drain Current |
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Similar Description - SFWI9520 |
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