S1E 4 DIE ID & GM Vs VG

0.10

1.00

10.00

100.00

0

2

4

6

8

10

12

14

16

18

Vgs in Volts

Id

gM

S1E 4 DIE CAPACITANCE

0.1

1

10

100

1000

0

5

10

15

20

25

30

35

40

45

50

VDS IN VOLTS

Coss

Ciss

Crss

ST744 P in vs Pou t F req=175

Mhz ;V ds=50 V dc , Idq=800ma

0

20

40

60

80

100

120

140

0

1

2

3

4

5

P in in w a tts

13

14

15

16

17

18

19

20

Pout

Gain

Efficiency@100W= 45%

POLYFET RF DEVICES

POUT VS PIN GRAPH

CAPACITANCE VS VOLTAGE

ID & GM VS VGS

IV CURVE

Zin Zout

PACKAGE DIMENSIONS IN INCHES

ST744

S1E 4 DIE IV

0

2

4

6

8

10

12

14

16

0

2

4

6

8

10

12

14

16

18

20

VDSINVOLTS

vg=2v

Vg=4v

Vg=6v

vg=8v

0

vg=12v

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com

REVISION 07/17/2003

Tolerance .XX +/-0.01

.XXX +/-.005 inches