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2MBI150N-120 Datasheet(PDF) 1 Page - Fuji Electric |
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2MBI150N-120 Datasheet(HTML) 1 Page - Fuji Electric |
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1 / 4 page  IGBT MODULE ( N series ) n n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function ( 4~5 Times Rated Current) n n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply n n Outline Drawing n n Maximum Ratings and Characteristics • Absolute Maximum Ratings ( T c=25°C ) Items Symbols Ratings Units Collector-Emitter Voltage VCES 1200 V Gate -Emitter Voltage VGES ± 20 V Continuous IC 150 Collector 1ms IC PULSE 300 Current Continuous -IC 150 1ms -IC PULSE 300 Max. Power Dissipation PC 1100 W Operating Temperature Tj +150 °C Storage Temperature Tstg -40 ∼ +125 °C Isolation Voltage A.C. 1min. Vis 2500 V Mounting *1 3.5 Terminals *2 4.5 Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) or (M6) *2:Recommendable Value; 3.5 ∼ 4.5 Nm (M6) • Electrical Characteristics ( at T j=25°C ) Items Symbols Test Conditions Min. Typ. Max. Units Zero Gate Voltage Collector Current ICES VGE=0V VCE=1200V 2.0 mA Gate-Emitter Leackage Current IGES VCE=0V VGE= ± 20V 30 µA Gate-Emitter Threshold Voltage VGE(th) VGE=20V IC=150mA 4.5 7.5 V Collector-Emitter Saturation Voltage VCE(sat) VGE=15V IC=150A 3.3 V Input capacitance Cies VGE=0V 24000 Output capacitance Coes VCE=10V 8700 pF Reverse Transfer capacitance Cres f=1MHz 7740 tON VCC=600V 0.65 1.2 tr IC=150A 0.25 0.6 tOFF VGE= ± 15V 0.85 1.5 tf RG=5.6 Ω 0.35 0.5 Diode Forward On-Voltage VF IF=150A VGE=0V 3.0 V Reverse Recovery Time trr IF=150A 350 ns • Thermal Characteristics Items Symbols Test Conditions Min. Typ. Max. Units Rth(j-c) IGBT 0.11 Thermal Resistance Rth(j-c) Diode 0.33 °C/W Rth(c-f) With Thermal Compound 0.025 n n Equivalent Circuit Screw Torque Turn-on Time Turn-off Time µs A Nm |
Similar Part No. - 2MBI150N-120 |
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Similar Description - 2MBI150N-120 |
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