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CPW2-0650-S006B Datasheet(PDF) 2 Page - Cree, Inc

Part # CPW2-0650-S006B
Description  Silicon Carbide Schottky Diode Chip
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Manufacturer  CREE [Cree, Inc]
Direct Link  http://www.cree.com/
Logo CREE - Cree, Inc

CPW2-0650-S006B Datasheet(HTML) 2 Page - Cree, Inc

  CPW2-0650-S006B Datasheet HTML 1Page - Cree, Inc CPW2-0650-S006B Datasheet HTML 2Page - Cree, Inc CPW2-0650-S006B Datasheet HTML 3Page - Cree, Inc  
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CPW2-0650-S006B Rev. -
Electrical Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
V
F
Forward Voltage
1.6
1.9
1.8
2.4
V
I
F = 6 A
T
J=25°C
I
F = 6 A
T
J=175°C
I
R
Reverse Current
12
24
60
220
μA
V
R = 650 V
T
J=25°C
V
R = 650 V
T
J=175°C
Q
C
Total Capacitive Charge
16
nC
V
R = 650 V, IF = 6 A
di/dt = 500 A/μs
T
J = 25°C
C
Total Capacitance
294
27
26
pF
V
R = 0 V, TJ = 25°C, f = 1 MHz
V
R = 200 V, TJ = 25˚C, f = 1 MHz
V
R = 400 V, TJ = 25˚C, f = 1 MHz
Note:
1. Assumes θJC Thermal Resistance of 1.6˚C/W or less
Mechanical Parameters
Parameter
Typ.
Unit
Die Size
1.55 x 1.55
mm
Anode Pad Size
1.29 x 1.29
mm
Anode Pad Opening
1.08 x 1.08
mm
Thickness
377 ± 10%
μm
Wafer Size
100
mm
Anode Metalization (Al)
4
μm
Cathode Metalization (Ni/Ag)
1.8
μm
Frontside Passivation
Polyimide


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