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PMFPB8032XP Datasheet(PDF) 7 Page - NXP Semiconductors |
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PMFPB8032XP Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 16 page NXP Semiconductors PMFPB8032XP 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination PMFPB8032XP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 21 December 2012 7 / 16 017aaa083 tp (s) 10- 3 102 103 10 1 10- 2 10- 1 102 10 103 Zth(j-a) (K/W) 1 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 0.05 0.02 0.01 0 FR4 PCB, mounting pad for cathode 6 cm2 Fig. 7. Schottky diode: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit MOSFET transistor static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -0.4 -0.6 -1 V VDS = -20 V; VGS = 0 V; Tj = 25 °C - - -1 µA IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tj = 150 °C - - -10 µA VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -100 nA IGSS gate leakage current VGS = 12 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -4.5 V; ID = -2.7 A; Tj = 25 °C - 80 102 mΩ VGS = -4.5 V; ID = -2.7 A; Tj = 150 °C - 116 148 mΩ VGS = -2.5 V; ID = -2.5 A; Tj = 25 °C - 95 125 mΩ RDSon drain-source on-state resistance VGS = -1.8 V; ID = -1.1 A; Tj = 25 °C - 120 156 mΩ gfs transfer conductance VDS = -10 V; ID = -2.7 A; Tj = 25 °C - 15 - S MOSFET transistor dynamic characteristics QG(tot) total gate charge - 5.7 8.6 nC QGS gate-source charge - 0.7 - nC QGD gate-drain charge VDS = -10 V; ID = -2.7 A; VGS = -4.5 V; Tj = 25 °C - 0.96 - nC |
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