PMFPB8032XP datasheet(7/16 Pages) PHILIPS

Part #	PMFPB8032XP

Description	20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky

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NXP Semiconductors

PMFPB8032XP

20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination

PMFPB8032XP

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Product data sheet

21 December 2012

7 / 16

017aaa083

tp (s)

10- 3

102

103

10

1

10- 2

10- 1

102

10

103

Zth(j-a)

(K/W)

1

duty cycle = 1

0.75

0.5

0.33

0.25

0.2

0.1

0.05

0.02

0.01

0

FR4 PCB, mounting pad for cathode 6 cm2

Fig. 7. Schottky diode: Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

10. Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

MOSFET transistor static characteristics

V(BR)DSS

drain-source

breakdown voltage

ID = -250 µA; VGS = 0 V; Tj = 25 °C

-20

-

V

VGSth

gate-source threshold

voltage

ID = -250 µA; VDS = VGS; Tj = 25 °C

-0.4

-0.6

-1

V

VDS = -20 V; VGS = 0 V; Tj = 25 °C

-

-1

µA

IDSS

drain leakage current

VDS = -20 V; VGS = 0 V; Tj = 150 °C

-

-10

µA

VGS = -12 V; VDS = 0 V; Tj = 25 °C

-

-100

nA

IGSS

gate leakage current

VGS = 12 V; VDS = 0 V; Tj = 25 °C

-

100

nA

VGS = -4.5 V; ID = -2.7 A; Tj = 25 °C

-

80

102

mΩ

VGS = -4.5 V; ID = -2.7 A; Tj = 150 °C

-

116

148

mΩ

VGS = -2.5 V; ID = -2.5 A; Tj = 25 °C

-

95

125

mΩ

RDSon

drain-source on-state

resistance

VGS = -1.8 V; ID = -1.1 A; Tj = 25 °C

-

120

156

mΩ

gfs

transfer conductance

VDS = -10 V; ID = -2.7 A; Tj = 25 °C

-

15

-

S

MOSFET transistor dynamic characteristics

QG(tot)

total gate charge

-

5.7

8.6

nC

QGS

gate-source charge

-

0.7

-

nC

QGD

gate-drain charge

VDS = -10 V; ID = -2.7 A; VGS = -4.5 V;

Tj = 25 °C

-

0.96

-

nC

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