PMFPB8032XP datasheet(1/16 Pages) PHILIPS

Part #	PMFPB8032XP

Description	20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky

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Manufacturer	PHILIPS [NXP Semiconductors]

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PMFPB8032XP

20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky

combination

21 December 2012

Product data sheet

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1. General description

Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench

MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)

Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118)

Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

• 1.8 V RDSon rated for low-voltage gate drive

• Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm

• Exposed drain pad for excellent thermal conduction

• Integrated ultra low VF MEGA Schottky diode

3. Applications

• Charging switch for portable devices

• DC-to-DC converters

• Power management in battery-driven portables

• Hard disk and computing power management

4. Quick reference data

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

MOSFET transistor

VDS

drain-source voltage

-

-20

V

VGS

gate-source voltage

Tj = 25 °C

-12

-

12

V

ID

drain current

VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s

[1]

-

-3.7

A

Schottky diode

IF

forward current

Tsp ≤ 105 °C

-

2

A

VR

reverse voltage

Tamb = 25 °C

-

20

V

MOSFET transistor static characteristics

RDSon

drain-source on-state

resistance

VGS = -4.5 V; ID = -2.7 A; Tj = 25 °C

-

80

102

mΩ

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