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PMPB12UN Datasheet(PDF) 5 Page - NXP Semiconductors |
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PMPB12UN Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 15 page NXP Semiconductors PMPB12UN 20 V single N-channel Trench MOSFET PMPB12UN All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 6 July 2012 5 / 15 017aaa542 tp (s) 10-3 102 103 10 1 10-2 10-1 102 10 103 Zth(j-a) (K/W) 1 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 0.05 0.02 0.01 0 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa543 tp (s) 10-3 102 103 10 1 10-2 10-1 102 10 103 Zth(j-a) (K/W) 1 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 0.05 0.02 0.01 0 FR4 PCB, mounting pad for drain 6 cm2 Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 20 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.4 0.7 1 V VDS = 20 V; VGS = 0 V; Tj = 25 °C - - 1 µA IDSS drain leakage current VDS = 20 V; VGS = 0 V; Tj = 150 °C - - 100 µA |
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