PMT21EN

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© NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 1 — 30 August 2011

6 of 15

NXP Semiconductors

PMT21EN

30 V, 7.4 A N-channel Trench MOSFET

(1) minimum values

(2) typical values

(3) maximum values

Fig 6.

Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig 7.

Sub-threshold drain current as a function of

gate-source voltage

Fig 8.

Drain-source on-state resistance as a function

of drain current; typical values

Fig 9.

Drain-source on-state resistance as a function

of gate-source voltage; typical values

04

3

12

017aaa332

10

20

30

(A)

0

4.5 V

10 V

2.6 V

2.4 V

3.0 V

2.3 V

017aaa244

03

2

1

(A)

(2)

(1)

(3)

234

26

10

18

017aaa333

40

60

20

80

100

(mΩ)

0

(1)

(2)

(3)

(4)

(5)

(6)

010

8

46

2

017aaa334

50

25

75

100

(mΩ)

0

(1)

(2)