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LMV851 Datasheet(PDF) 2 Page - Texas Instruments

Part # LMV851
Description  LMV851/LMV852/LMV854 8 MHz Low Power CMOS, EMI Hardened Operational Amplifiers
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

LMV851 Datasheet(HTML) 2 Page - Texas Instruments

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ADC
PRESSURE
SENSOR
EMI HARDENED
EMI HARDENED
+
-
V
+
R1
R2
INTERFERING
RF SOURCES
NO RF RELATED
DISTURBANCES
LMV851, LMV852, LMV854
SNOSAW1 – OCTOBER 2007
www.ti.com
Typical Application
Figure 1. Sensor Amplifiers Close to RF Sources
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)
ESD Tolerance (2)
Human Body Model
2 kV
Charge-Device Model
1 kV
Machine Model
200V
VINDifferential
± Supply Voltage
Supply Voltage (V+ – V)
6V
Voltage at Input/Output Pins
V+ +0.4V
V
−0.4V
Storage Temperature Range
−65°C to +150°C
Junction Temperature (3)
+150°C
Soldering Information
Infrared or Convection (20 sec)
+260°C
(1)
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test
conditions, see the Electrical Characteristics Tables.
(2)
Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of
JEDEC) Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).
(3)
The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient
temperature is PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board.
2
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Copyright © 2007, Texas Instruments Incorporated
Product Folder Links: LMV851 LMV852 LMV854


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