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LMV851 Datasheet(PDF) 2 Page - Texas Instruments |
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LMV851 Datasheet(HTML) 2 Page - Texas Instruments |
2 / 30 page + - + - ADC PRESSURE SENSOR EMI HARDENED EMI HARDENED + - V + R1 R2 INTERFERING RF SOURCES NO RF RELATED DISTURBANCES LMV851, LMV852, LMV854 SNOSAW1 – OCTOBER 2007 www.ti.com Typical Application Figure 1. Sensor Amplifiers Close to RF Sources These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings (1) ESD Tolerance (2) Human Body Model 2 kV Charge-Device Model 1 kV Machine Model 200V VINDifferential ± Supply Voltage Supply Voltage (V+ – V−) 6V Voltage at Input/Output Pins V+ +0.4V V− −0.4V Storage Temperature Range −65°C to +150°C Junction Temperature (3) +150°C Soldering Information Infrared or Convection (20 sec) +260°C (1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics Tables. (2) Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of JEDEC) Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC). (3) The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board. 2 Submit Documentation Feedback Copyright © 2007, Texas Instruments Incorporated Product Folder Links: LMV851 LMV852 LMV854 |
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