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AB081Q100W Datasheet(PDF) 1 Page - Roithner LaserTechnik GmbH

Part # AB081Q100W
Description  High Power Single Bar QCW Infrared Laser Diode
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Manufacturer  ROITHNER [Roithner LaserTechnik GmbH]
Direct Link  http://www.roithner-laser.com
Logo ROITHNER - Roithner LaserTechnik GmbH

AB081Q100W Datasheet(HTML) 1 Page - Roithner LaserTechnik GmbH

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20.09.2010
AB081Q100W
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AB081Q100W
TECHNICAL DATA
High Power Single Bar QCW Infrared Laser Diode
Features
Applications
• Output Power: 100 W
• 780-830 nm Emission Wavelength
• Spectral Width: ≤3 nm
• High Reliability, High Efficiency
• Laser Pumping
• Medical Usage
• Printing
Specifications (25°C)
Item
Symbol
Value
Unit
Optical Specifications
QCW Output Power
PO
100
W
Array Length
L
10
mm
Center Wavelength
λC
780-830
nm
Wavelength Tolerance
± 5
nm
Spectral Width
Δλ
≤ 3
nm
Emitting Area
W x H
80 x 1
µm
Emitter Pitch
100
µm
Number of Emitters
100
Wavelength Temperature Coefficient
0.3
nm/°C
Beam Divergence
θ┴×θ║
40x8
deg
Electrical Specifications
Slope Efficiency
ES
≥ 1
W/A
Conversion Efficiency
NS
≥ 40%
Threshold Current
ITH
≤ 20
A
Operating Current
IF
≤ 100
A
Operating Voltage
UF
≤ 2
V
Absolute Maximum Ratings
Reverse Voltage
UR
2.5
V
Operating Temperature
TOP
+10 … +40
°C
Storage Temperature
TSTG
-40 ... +85
°C


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