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AB081Q100W Datasheet(PDF) 1 Page - Roithner LaserTechnik GmbH |
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AB081Q100W Datasheet(HTML) 1 Page - Roithner LaserTechnik GmbH |
1 / 3 page 20.09.2010 AB081Q100W 1 of 3 AB081Q100W TECHNICAL DATA High Power Single Bar QCW Infrared Laser Diode Features Applications • Output Power: 100 W • 780-830 nm Emission Wavelength • Spectral Width: ≤3 nm • High Reliability, High Efficiency • Laser Pumping • Medical Usage • Printing Specifications (25°C) Item Symbol Value Unit Optical Specifications QCW Output Power PO 100 W Array Length L 10 mm Center Wavelength λC 780-830 nm Wavelength Tolerance ± 5 nm Spectral Width Δλ ≤ 3 nm Emitting Area W x H 80 x 1 µm Emitter Pitch 100 µm Number of Emitters 100 Wavelength Temperature Coefficient 0.3 nm/°C Beam Divergence θ┴×θ║ 40x8 deg Electrical Specifications Slope Efficiency ES ≥ 1 W/A Conversion Efficiency NS ≥ 40% Threshold Current ITH ≤ 20 A Operating Current IF ≤ 100 A Operating Voltage UF ≤ 2 V Absolute Maximum Ratings Reverse Voltage UR 2.5 V Operating Temperature TOP +10 … +40 °C Storage Temperature TSTG -40 ... +85 °C |
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