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IPI80CN10N-G Datasheet(PDF) 6 Page - Infineon Technologies AG |
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IPI80CN10N-G Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 12 page IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=13 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ 98 % 0 20 40 60 80 100 120 140 160 180 -60 -20 20 60 100 140 180 T j [°C] 12 µA 120 µA 0 0.5 1 1.5 2 2.5 3 3.5 4 -60 -20 20 60 100 140 180 T j [°C] Ciss Coss Crss 100 101 102 103 0 20 40 60 80 V DS [V] 25 °C 175 °C 25 °C, 98% 175 °C, 98% 0.1 1 10 100 0 0.5 1 1.5 2 V SD [V] Rev. 1.091 page 6 2013-07-25 |
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