ZXTDE4M832 datasheet(4/8 Pages) DIODES

Part #	ZXTDE4M832

Description	DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION

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Manufacturer	DIODES [Diodes Incorporated]

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ZXTDE4M832

ISSUE 1 - JUNE 2002

4

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Collector-Base Breakdown

Voltage

V(BR)CBO

100

180

V

IC=100 A

Collector-Emitter Breakdown

Voltage

V(BR)CEO

80

110

V

IC=10mA*

Emitter-Base Breakdown Voltage

V(BR)EBO

7.5

8.2

V

IE=100 A

Collector Cut-Off Current

ICBO

25

nA

VCB=80V

Emitter Cut-Off Current

IEBO

25

nA

VEB=6V

Collector Emitter Cut-Off Current

ICES

25

nA

VCE=65V

Collector-Emitter Saturation

Voltage

VCE(sat)

15

45

145

160

240

20

60

185

200

325

mV

IC=0.1A, IB=10mA*

IC=0.5A, IB=50mA*

IC=1A, IB=20mA

IC=1.5A, IB=50mA

IC=3.5A, IB=300mA

Base-Emitter Saturation Voltage

VBE(sat)

1.09

1.175

V

IC=3.5A, IB=300mA*

Base-Emitter Turn-On Voltage

VBE(on)

0.96

1.05

V

IC=3.5A, VCE=2V*

Static Forward Current Transfer

Ratio

hFE

200

300

110

60

20

450

170

90

30

10

900

IC=10mA, VCE=2V*

IC=200mA, VCE=2V*

IC=1A, VCE=2V*

IC=1.5A, VCE=2V*

IC=3A, VCE=2V*

IC=5A, VCE=2V*

Transition Frequency

fT

100

160

MHz

IC=50mA, VCE=10V

f=100MHz

Output Capacitance

Cobo

11.5

18

pF

VCB=10V, f=1MHz

Turn-On Time

t(on)

86

ns

VCC=10V, IC=1A

IB1=IB2=25mA

Turn-Off Time

t(off)

1128

ns

NPN TRANSISTOR

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

*Measured under pulsed conditions.

OBSOLETE - PLEASE USE ZXTC6720MC

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