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IR2213 Datasheet(PDF) 1 Page - International Rectifier |
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IR2213 Datasheet(HTML) 1 Page - International Rectifier |
1 / 18 page IR2213(S)PBF 1 www.irf.com © 2014 International Rectifier February 4, 2014 High and Low Side Driver Ordering Information Features Floating channel designed for bootstrap operation Fully operational to +1200 V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 12 V to 20 V Undervoltage lockout for both channels 3.3 V logic compatible Separate logic supply range from 3.3 V to 20 V Logic and power ground ±5 V offset CMOS Schmitt-triggered inputs with pull-down Cycle by cycle edge-triggered shutdown logic Matched propagation delay for both channels Outputs in phase with inputs Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 1200 V. Product Summary VOFFSET (max) 1200 V IO+/- 1.7 A / 2 A VOUT 12 V – 20 V ton/off (typical) 280 ns / 225 ns Delay Matching 30 ns Package Options 16 Lead SOIC 14 Lead PDIP (Wide Body) Base Part Number Package Type Standard Pack Orderable Part Number Form Quantity IR2213SPBF SO16WB Tube 45 IR2213SPBF IR2213SPBF SO16WB Tape and Reel 1000 IR2213STRPBF IR2213PBF PDIP14 Tube 25 IR2213PBF |
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Similar Description - IR2213 |
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