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ZXT14P12DXTA Datasheet(PDF) 2 Page - Diodes Incorporated |
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ZXT14P12DXTA Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 6 page ISSUE 1 - MARCH 2000 ZXT14P12DX THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) RθJA 113 °C/W Junction to Ambient (b) RθJA 70 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 10secs (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. 2 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Collector-Base Voltage VCBO -20 V Collector-Emitter Voltage VCEO -12 V Emitter-Base Voltage VEBO -7.5 V Peak Pulse Current ICM -40 A Continuous Collector Current IC -6 A Base Current IB -500 mA Power Dissipation at TA=25°C (a) Linear Derating Factor PD 1.1 8.8 W mW/°C Power Dissipation at TA=25°C (b) Linear Derating Factor PD 1.8 14.4 W mW/°C Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C |
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