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IRFR9010PBF Datasheet(PDF) 1 Page - Vishay Siliconix |
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IRFR9010PBF Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 10 page IRFR9010, IRFU9010, SiHFR9010, SiHFU9010 www.vishay.com Vishay Siliconix S13-0167-Rev. D, 04-Feb-13 1 Document Number: 91378 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Power MOSFET FEATURES • Surface Mountable (Order as IRFR9010, SiHFR9010) • Straight Lead Option (Order as IRFU9010, SiHFU9010) • Repetitive Avalanche Ratings • Dynamic dV/dt Rating • Simple Drive Requirements • Ease of Paralleling • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION The power MOSFET technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dV/dt capability. The power MOSFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. Surface mount packages enhance circuit performance by reducing stray inductances and capacitance. The DPAK (TO-252) surface mount package brings the advantages of power MOSFETs to high volume applications where PC Board surface mounting is desirable. The surface mount option IRFR9010, SiHFR9010 is provided on 16 mm tape. The straight lead option IRFU9010, SiHFU9010 of the device is called the IPAK (TO-251). They are well suited for applications where limited heat dissipation is required such as, computers and peripherals, telecommunication equipment, DC/DC converters, and a wide range of consumer products. Note a. See device orientation. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14). b. VDD = - 25 V, starting TJ = 25 °C, L = 9.7 mH, Rg = 25 , peak IL = - 5.3 A. c. ISD - 5.3 A, dI/dt - 80 A/μs, VDD 40 V, TJ 150 °C, suggested Rg = 24 . d. 0.063" (1.6 mm) from case. PRODUCT SUMMARY VDS (V) - 50 RDS(on) ()VGS = - 10 V 0.50 Qg (Max.) (nC) 9.1 Qgs (nC) 3.0 Qgd (nC) 5.9 Configuration Single S G D P-Channel MOSFET DPAK (TO-252) IPAK (TO-251) G D S S D G D ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free and Halogen-free SiHFR9010-GE3 SiHFR9010TR-GE3a SiHFR9010TRL-GE3a SiHFU9010-GE3 Lead (Pb)-free IRFR9010PbF IRFR9010TRPbFa IRFR9010TRLPbFa IRFU9010PbF SiHFR9010-E3 SiHFR9010T-E3a SiHFR9010TL-E3a SiHFU9010-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS - 50 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at - 10 V TC = 25 °C ID - 5.3 A TC = 100 °C - 3.3 Pulsed Drain Currenta IDM - 21 Linear Derating Factor 0.20 W/°C Single Pulse Avalanche Energyb EAS 136 mJ Repetitive Avalanche Currenta IAR - 5.3 A Repetitive Avalanche Energya EAR 2.5 mJ Maximum Power Dissipation TC = 25 °C PD 25 W Peak Diode Recovery dV/dtc dV/dt 5.8 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature)d for 10 s 300 |
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