IRFR9010, IRFU9010, SiHFR9010, SiHFU9010

www.vishay.com

Vishay Siliconix

S13-0167-Rev. D, 04-Feb-13

1

Document Number: 91378

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Power MOSFET

FEATURES

• Surface

Mountable

(Order

as

IRFR9010,

SiHFR9010)

• Straight Lead Option (Order as IRFU9010,

SiHFU9010)

• Repetitive Avalanche Ratings

• Dynamic dV/dt Rating

• Simple Drive Requirements

• Ease of Paralleling

• Material categorization: For definitions of compliance

DESCRIPTION

The power MOSFET technology is the key to Vishay’s

advanced line of power MOSFET transistors. The efficient

geometry and unique processing of this latest “State of the

Art”

design

achieves:

very

low

on-state

resistance

combined with high transconductance; superior reverse

energy and diode recovery dV/dt capability.

The power MOSFET transistors also feature all of the well

established advantages of MOSFETs such as voltage

control, very fast switching, ease of paralleling and

temperature stability of the electrical parameters.

Surface mount packages enhance circuit performance by

reducing stray inductances and capacitance. The DPAK

(TO-252) surface mount package brings the advantages of

power MOSFETs to high volume applications where PC

Board surface mounting is desirable. The surface mount

option IRFR9010, SiHFR9010 is provided on 16 mm tape.

The straight lead option IRFU9010, SiHFU9010 of the device

is called the IPAK (TO-251).

They are well suited for applications where limited heat

dissipation is required such as, computers and peripherals,

telecommunication equipment, DC/DC converters, and a

wide range of consumer products.

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).

d. 0.063" (1.6 mm) from case.

PRODUCT SUMMARY

- 50

0.50

9.1

3.0

5.9

Configuration

Single

S

G

D

P-Channel MOSFET

DPAK

(TO-252)

IPAK

(TO-251)

G

D S

S

D

G

D

ORDERING INFORMATION

Package

DPAK (TO-252)

DPAK (TO-252)

DPAK (TO-252)

IPAK (TO-251)

Lead (Pb)-free and Halogen-free

SiHFR9010-GE3

SiHFU9010-GE3

Lead (Pb)-free

IRFR9010PbF

IRFU9010PbF

SiHFR9010-E3

SiHFU9010-E3

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

- 50

V

Gate-Source Voltage

± 20

Continuous Drain Current

- 5.3

A

- 3.3

- 21

Linear Derating Factor

0.20

W/°C

136

mJ

- 5.3

A

2.5

mJ

Maximum Power Dissipation

25

W

dV/dt

5.8

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

for 10 s

300