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STB200N6F3 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STB200N6F3
Description  N-channel 60 V, 3 m廓, 120 A D2PAK, TO-220, I2PAK STripFET??Power MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB200N6F3 Datasheet(HTML) 3 Page - STMicroelectronics

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STB200N6F3, STI200N6F3, STP200N6F3
Electrical ratings
Doc ID 15606 Rev 2
3/16
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS=0)
60
V
VGS
Gate-source voltage
± 20
V
ID
(1)
1.
Current limited by package.
Drain current (continuous) at TC = 25°C
120
A
ID
(1)
Drain current (continuous) at TC=100°C
120
A
IDM
(2)
2.
Pulse width limited by safe operating area.
Drain current (pulsed)
480
A
PTOT
Total dissipation at TC = 25°C
330
W
Derating factor
2.2
W/°C
EAS
(3)
3.
Starting Tj = 25 °C, ID = 60 A, VDD = 35 V (see Figure 18 and Figure 19)
Single pulse avalanche energy
918
mJ
Tj
Tstg
Operating junction temperature
storage temperature
-55 To 175
°C
Table 3.
Thermal data
Symbol
Parameter
TO-220/I²PAK
D²PAK
Unit
Rthj-case
Thermal resistance junction-case
0.45
°C/W
Rthj-a
Thermal resistance junction-ambient
max
62.5
°C/W
Rthj-pcb(1)
1.
When mounted on 1 inch² FR4 2oz Cu.
Thermal resistance junction-ambient
max
50
°C/W
Tl
Maximum lead temperature for
soldering purpose
300
°C


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