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ZXMP6A17GQ Datasheet(PDF) 4 Page - Diodes Incorporated |
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ZXMP6A17GQ Datasheet(HTML) 4 Page - Diodes Incorporated |
4 / 8 page ZXMP6A17GQ Document Number DS36686 Rev. 2 - 2 4 of 8 www.diodes.com December 2013 © Diodes Incorporated ZXMP6A17GQ Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS -60 V ID = -250µA, VGS = 0V Zero Gate Voltage Drain Current IDSS -0.5 µA VDS = -60V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) -1 V ID = -250μA, VDS = VGS Static Drain-Source On-Resistance (Note 10) RDS(ON) 0.096 0.125 Ω VGS = -10V, ID = -2.2A 0.12 0.19 VGS = -4.5V, ID = -1.8A Forward Transconductance (Notes 10 & 11) gfs 4.7 S VDS = -15V, ID = -2.2A Diode Forward Voltage (Note 10) VSD -0.85 -0.95 V IS = -2A, VGS = 0V, TJ = +25°C Reverse recovery time (Note 11) trr 25.1 ns IS = -1.7A, di/dt = 100A/µs, TJ = +25°C Reverse recovery charge (Note 11) Qrr 27.2 nC DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance Ciss 637 pF VDS = -30V, VGS = 0V f = 1MHz Output Capacitance Coss 70 pF Reverse Transfer Capacitance Crss 53 pF Total Gate Charge (Note 12) Qg 9 nC VGS = -4.5V VDS = -30V ID = -2.2A Total Gate Charge (Note 12) Qg 17.7 nC VGS = -10V Gate-Source Charge (Note 12) Qgs 1.6 nC Gate-Drain Charge (Note 12) Qgd 4.4 nC Turn-On Delay Time (Note 12) tD(on) 2.6 ns VDD = -30V, VGS = -10V ID = -1A, RG 6Ω Turn-On Rise Time (Note 12) tr 3.4 ns Turn-Off Delay Time (Note 12) tD(off) 26.2 ns Turn-Off Fall Time (Note 12) tf 11.3 ns Notes: 10. Measured under pulsed conditions. Pulse width 300µs; duty cycle 2%. 11. For design aid only, not subject to production testing. 12. Switching characteristics are independent of operating junction temperatures. |
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