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2SK2655-01R Datasheet(PDF) 1 Page - Fuji Electric |
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2SK2655-01R Datasheet(HTML) 1 Page - Fuji Electric |
1 / 2 page 2SK2655-01R N-channel MOS-FET FAP-IIS Series 900V 2Ω 8A 100W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings ( T C=25°C), unless otherwise specified Item Symbol Rating Unit Drain-Source-Voltage V DS 900 V Continous Drain Current I D 8 A Pulsed Drain Current I D(puls) 32 A Gate-Source-Voltage V GS ±30 V Repetitive or Non-Repetitive (Tch ≤ 150°C) I AR 8 A Avalanche Energy E AS 141 mJ Max. Power Dissipation P D 100 W Operating and Storage Temperature Range T ch 150 °C T stg -55 ~ +150 °C - Electrical Characteristics (TC=25°C), unless otherwise specified Item Symbol Test conditions Min. Typ. Max. Unit Drain-Source Breakdown-Voltage V (BR)DSS ID=1mA VGS=0V 900 V Gate Threshhold Voltage V GS(th) ID=1mA VDS=VGS 3,5 4,0 4,5 V Zero Gate Voltage Drain Current I DSS VDS=900V Tch=25°C 10 500 µA VGS=0V Tch=125°C 0,2 1,0 mA Gate Source Leakage Current I GSS VGS=±30V VDS=0V 10 100 nA Drain Source On-State Resistance R DS(on) ID=4A VGS=10V 1,48 2,0 Ω Forward Transconductance g fs ID=4A VDS=25V 5 S Input Capacitance C iss VDS=25V 1200 pF Output Capacitance C oss VGS=0V 180 pF Reverse Transfer Capacitance C rss f=1MHz 90 pF Turn-On-Time ton (ton=td(on)+tr) t d(on) VCC=600V 30 ns t r ID=8A 120 ns Turn-Off-Time toff (ton=td(off)+tf) t d(off) VGS=10V 95 ns t f RGS=10 Ω 60 ns Avalanche Capability I AV L = 100µH Tch=25°C 8 A Diode Forward On-Voltage V SD IF=2xIDR VGS=0V T ch=25°C 1,0 V Reverse Recovery Time t rr IF=IDR VGS=0V 1000 ns Reverse Recovery Charge Q rr -dIF/dt=100A/µs T ch=25°C 12 µC - Thermal Characteristics Item Symbol Test conditions Min. Typ. Max. Unit Thermal Resistance R th(ch-a) channel to air 30 °C/W R th(ch-c) channel to case 1,25 °C/W Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98 |
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