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ZX3CD1S1M832TC Datasheet(PDF) 3 Page - Diodes Incorporated |
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ZX3CD1S1M832TC Datasheet(HTML) 3 Page - Diodes Incorporated |
3 / 9 page ZX3CD1S1M832 ISSUE 2 - OCTOBER 2007 3 0.1 1 10 0.01 0.1 1 10 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 100µ 1m 10m 100m 1 10 100 1k 0 20 40 60 80 0.1 1 10 100 0 25 50 75 100 125 150 175 200 225 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Note (a)(f) 100us 100ms 1s V CE(SAT) Limited 1ms Safe Operating Area Single Pulse, T amb =25°C DC 10ms V CE Collector-Emitter Voltage (V) 1oz Cu Note (d)(f) 1oz Cu Note (d)(g) 2oz Cu Note (a)(f) 2oz Cu Note (e)(g) Derating Curve T amb =25°C Temperature (°C) Note (a)(f) D=0.2 D=0.5 D=0.1 Transient Thermal Impedance Single Pulse D=0.05 Pulse Width (s) 1oz copper Note (g) 1oz copper Note (f) 2oz copper Note (f) 2oz copper Note (g) Thermal Resistance v Board Area BoardCuArea (sqcm) 1oz copper Note (g) 2oz copper Note (g) 1oz copper Note (f) 2oz copper Note (f) Power Dissipation v Board Area T amb =25°C T jmax =150°C Continuous BoardCuArea (sqcm) TRANSISTOR TYPICAL CHARACTERISTICS OBSOLETE - PLEASE USE ZXTPS717MC |
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