GaN Hybrid Power Amplifier

HR5459-25B

Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com

All specifications may change without notice

US Facility : 919-677-8780 / sales@rfhicusa.com

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Version 1.0

Product Features

Applications

• GaN on SiC HEMT

• Surface Mount Hybrid Type

• Compact Size & Mass

• High Efficiency

• Low Cost

• Custom design available

• Radar Systems

• Pulse amplifier application

Description

The HR5459-25B is designed for Radar system application frequencies from 5.4GHz to 5.9GHz and GaN HEMT technology has been

used that performs high breakdown voltage, wide bandwidth and high efficiency. HR5459-25B has been designed 2 stages to have

higher Gain at the wide frequency range of 5.4GHz ~5.9GHz. GaN HEMT technology has been used to every amplifier in it for better

reliability. Since it is high efficiency amplifier, it can perform at max 10% duty cycle and 50us of pulse width.

PARAMETER

UNIT

MIN

TYP

MAX

CONDITION

Frequency Range

MHz

5400

-

5900

ZS = ZL = 50 ohm

Power Gain

dB

-

20

-

Amp : Idq1 = 10mA

Idq2 = 10mA

Power Flatness

-

-

1

Input Return Loss

-

-8

-

Pout @ Psat

W

20

25

-

Harmonics 1 to N

dBc

-25

Pulse Droop

dB

0.5

Pulse

Response

Fall Time

ns

200

Rise Time

ns

200

Drain Efficiency

%

-

40

-

Pout @ Peak

Ids

A

-

1.25

Supply Voltage

V

-3.5

-3.3

-2.7

Gate Bias (

V

-

50

Main Bias(Vds)

Caution

The drain voltage must be supplied to the device after the gate voltage is supplied

Turn on : Turn on the Gate Voltage supply and last turn On the Drain voltage supplies

Turn off : Turn off the Drain Voltage and last turn off the Gate voltage

Test condition = 50us (pulse width), 10%(duty cycle), Pin=25.5dBm

Note

HR Series have internal DC blocking capacitors at the RF input and output ports

Mechanical Specifications

PARAMETER

UNIT

TYP

REMARK

Mass

g

2

-

Dimension

㎜

20.5 x 12.5 x 4.8

-

Package Type : NP-36