GaN Doherty Hybrid Amplifier

RTH23007-10

Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com

All specifications may change without notice

US Facility : 919-677-8780 / sales@rfhicusa.com

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Version 1.1

Absolute Maximum Ratings

PARAMETER

UNIT

RATING

SYMBOL

Gate-Source Voltage

V

-10 ~ 0

Vgc

Vgp

Drain-Source Voltage

V

50

Vds

Gate Current

mA

4.0

Igs

Operating Junction Temperature

°C

225

Operating Case Temperature

°C

-30 ~ 85

Storage Temperature

°C

-40 ~ 100

Operating Voltage & Input Level

*Vgp(Peaking gate voltage) set: Lower Vgp of Δ-1.9V at Peaking Idq 10mA

PARAMETER

UNIT

MIN

TYP

MAX

SYMBOL

Drain Voltage

V

30.5

31

31.5

Vds

Gate Voltage (on-stage)

V

-

Vgc @Carrier Idq

-2

Vgc

Gate Voltage (on-stage)

V

-

Vgp

-2

Vgp

Gate Voltage (off-stage)

V

-

-8

-

Vgc

Gate Voltage (off-stage)

V

-

-8

-

Vgp

RF Input Level

dB

-

-

35

Pin

Block Diagram

*Note

Directional coupler, isolator and drive amplifier MUST be located CLOSE to the DUT(device under test) is needed for best performance.