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RTH23007-10 Datasheet(PDF) 2 Page - RFHIC |
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RTH23007-10 Datasheet(HTML) 2 Page - RFHIC |
2 / 7 page GaN Doherty Hybrid Amplifier RTH23007-10 Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com All specifications may change without notice US Facility : 919-677-8780 / sales@rfhicusa.com 2 / 7 Version 1.1 Absolute Maximum Ratings PARAMETER UNIT RATING SYMBOL Gate-Source Voltage V -10 ~ 0 Vgc Vgp Drain-Source Voltage V 50 Vds Gate Current mA 4.0 Igs Operating Junction Temperature °C 225 TJ Operating Case Temperature °C -30 ~ 85 TC Storage Temperature °C -40 ~ 100 TSTG Operating Voltage & Input Level *Vgp(Peaking gate voltage) set: Lower Vgp of Δ-1.9V at Peaking Idq 10mA PARAMETER UNIT MIN TYP MAX SYMBOL Drain Voltage V 30.5 31 31.5 Vds Gate Voltage (on-stage) V - Vgc @Carrier Idq -2 Vgc Gate Voltage (on-stage) V - Vgp -2 Vgp Gate Voltage (off-stage) V - -8 - Vgc Gate Voltage (off-stage) V - -8 - Vgp RF Input Level dB - - 35 Pin Block Diagram *Note Directional coupler, isolator and drive amplifier MUST be located CLOSE to the DUT(device under test) is needed for best performance. |
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