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6MBI35S-120 Datasheet(PDF) 3 Page - Fuji Electric |
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6MBI35S-120 Datasheet(HTML) 3 Page - Fuji Electric |
3 / 4 page 6MBI35S-120 IGBT Modules 020 40 60 50 100 500 1000 ton tr toff tf Switching time vs. Collector current (typ.) Collector current : Ic [ A ] 020 40 60 50 100 500 1000 tf tr ton toff Switching time vs. Collector current (typ.) Collector current : Ic [ A ] 10 50 100 500 50 100 500 1000 5000 toff ton tr tf Switching time vs. Gate resistance (typ.) Gate resistance : Rg [ Ω ] 020 40 60 0 2 4 6 8 10 Err(25 o C) Eoff(25o)C Eon(25 o C) Err(125 o C) Eoff(125 o C) Eon(125 o C) Switching loss vs. Collector current (typ.) Collector current : Ic [ A ] 10 50 100 500 0 5 10 15 20 25 Switching loss vs. Gate resistance (typ.) Gate resistance : Rg [ Ω ] Eon Err Eoff 0 200 400 600 800 1000 1200 1400 0 20 40 60 80 100 Reverse bias safe operating area Collector - Emitter voltage : VCE [ V ] Vcc=600V,VGE=±15V, Rg=33 Ω,Tj=125oC Vcc=600V,VGE=±15V, Rg=33 Ω,Tj=25oC Vcc=600V,VGE=±15V, Rg=33 Ω Vcc=600V,Ic=35A,VGE=±15V, Tj=25 oC = +VGE=15V, -VGE<15V, Rg>33 Ω,Tj<125oC = = Vcc=600V,Ic=35A,VGE=±15V,Tj=125 oC |
Similar Part No. - 6MBI35S-120 |
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Similar Description - 6MBI35S-120 |
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