SOT23 NPN SILICON PLANAR

HIGH FREQUENCY TRANSISTOR

ISSUE 3 - JANUARY 1996

FEATURES

* Max capacitance=1pF

* Low noise 4.5dB

PARTMARKING DETAIL - 179

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

20

V

Collector-Emitter Voltage

12

V

Emitter-Base Voltage

2.5

V

Continuous Collector Current

50

mA

Power Dissipation

330

mW

Operating and Storage Temperature Range

-55 to +150

°C

PARAMETER

SYMBOL

MIN.

MAX.

UNIT CONDITIONS.

Collector-Emitter Sustaining

Voltage

V

Collector-Base Breakdown

Voltage

20

V

Emitter-Base Breakdown

Voltage

2.5

V

Collector Cut-Off

Current

0.02

1.0

µ

A

µ

A

Static Forward Current

Transfer Ratio

25

250

Collector-Emitter Saturation

Voltage

0.4

V

Base-Emitter

Saturation Voltage

1.0

V

Transition Frequency

900

2000

Collector-Base Capacitance

1pF

Small Signal Current Gain

25

300

314

ps

Noise Figure

4.5

dB

Common-Emitter Amplifier

Power Gain

Gpe

15

dB

f=200MHz

Spice parameter data is available upon request for this device

FMMT5179

FMMT5179

100

50

0

150

200

100

TYPICAL CHARACTERISTICS

0.1

1

10

0.4

0.2

0

0.8

1.0

0.6

500

0

1500

1000

30

0

0.1

1

10

1.2

f=100MHz

175°C

100°C

25°C

-55°C

100

0.1

1

10

175°C

100°C

25°C

-55°C

100

0.1

1

10

1.0

0.8

0.6

0.4

0.2

f=1MHz

C

B

E

SOT23

3 - 170

3 - 169