Part Name
         Description
2SK2361

 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ( 8 Page)


NEC
100% 
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2SK2361/2SK2362
2
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
TEST CONDITIONS
Drain to Source On-Resistance
RDS (on)
0.7
0.9
VGS = 10 V
2SK2361
0.8
1.0
ID = 5.0 A
2SK2362
Gate to Source Cutoff Voltage
VGS (off)
2.5
3.5
VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs |
3.0
VDS = 10 V, ID = 5.0 A
Drain Leakage Current
IDSS
100
VDS = VDSS, VGS = 0
Gate to Source Leakage Current
IGSS
±100
VGS =
±30 V, VDS = 0
Input Capacitance
Ciss
1050
VDS = 10 V
Output Capacitance
Coss
200
VGS = 0
Reverse Transfer Capacitance
Crss
26
f = 1 MHz
Turn-On Delay Time
td (on)
15
ID = 5.0 A
Rise Time
tr
24
VGS = 10 V
Turn-Off Delay Time
td (off)
50
VDD = 150 V
Fall Time
tf
14
RG = 10
Ω R
L = 30
Ω
Total Gate Charge
QG
26
ID = 10 A
Gate to Source Charge
QGS
6.1
VDD = 400 V
Gate to Drain Charge
QGD
12
VGS = 10 V
Body Diode Forward Voltage
VF (S-D)
1.0
IF = 10 A, VGS = 0
Reverse Recovery Time
trr
350
IF = 10 A, VGS = 0
Reverse Recovery Charge
Qrr
2.0
di/dt = 50 A/
µs
UNIT
Ω
Ω
V
S
µA
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µC
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
Test Circuit 3 Gate Charge
VGS = 20 - 0 V
PG
RG = 25
Ω
50
Ω
D.U.T.
L
VDD
Test Circuit 1 Avalanche Capability
PG.
RG = 10
Ω
D.U.T.
RL
VDD
Test Circuit 2 Switching Time
RG
PG.
IG = 2 mA
50
Ω
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
t = 1 us
Duty Cycle
≤ 1 %
VGS
Wave Form
ID
Wave Form
VGS
ID
10 %
10 %
0
0
90 %
90 %
90 %
10 %
VGS (on)
ID
ton
toff
td (on)
tr
td (off)
tf
t
1  2  3  4  5  6  7  8 



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