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XP161A1265PR-G

Power MOSFET

PRODUCTS

PACKAGE

ORDER UNIT

XP161A1265PR

SOT-89

1,000/Reel

XP161A1265PR-G

(*)

SOT-89

1,000/Reel

PARAMETER

SYMBOL RATINGS

UNITS

Drain-Source Voltage

Vdss

20

V

Gate-Source Voltage

Vgss

±12

V

Drain Current (DC)

Id

4

A

Drain Current (Pulse)

Idp

16

A

Reverse Drain Current

Idr

4

A

Channel Power Dissipation *

Pd

2

W

Channel Temperature

Tch

150

℃

Storage Temperature

Tstg

-55~150

℃

■GENERAL DESCRIPTION

The XP161A1265PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

A gate protect diode is built-in to prevent static damage.

The small SOT-89 package makes high density mounting possible.

■APPLICATIONS

●Notebook PCs

●Cellular and portable phones

●On-board power supplies

●Li-ion battery systems

■FEATURES

Low On-State Resistance : Rds(on)=0.055Ω@ Vgs=4.5V

: Rds(on)=0.095Ω@ Vgs=2.5V

Ultra High-Speed Switching

Gate Protect Diode Built-in

Driving Voltage

: 2.5V

N-Channel Power MOSFET

DMOS Structure

Small Package

: SOT-89

Environmentally Friendly : EU RoHS Compliant, Pb Free

■PIN CONFIGURATION/

MARKING

■PRODUCT NAME

■ABSOLUTE MAXIMUM RATINGS

■EQUIVALENT CIRCUIT

Ta = 25℃

* When implemented on a ceramic PCB

ETR1123_003

G : Gate

S : Source

D : Drain

being fully RoHS compliant.

* x represents production lot number.