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XP202A0003MR-12 Datasheet(PDF) 1 Page - Torex Semiconductor |
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XP202A0003MR-12 Datasheet(HTML) 1 Page - Torex Semiconductor |
1 / 5 page 1/5 XP202A0003MR-G P-channel 4V (G-S) MOSFET PRODUCT NAME PACKAGE ORDER UNIT XP202A0003MR-G SOT-23 3,000/Reel PARMETER SYMBOL RATINGS UNITS Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Drain Current (DC) ID -3 A Drain Current(Pulse) (* 1) IDP -12 A Channel Power Dissipation (*2) Pd 1 W Channel Temperature Tch +150 ℃ Storage Temperature Tstg - 55 ~ +150 ℃ LIMITS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Drain-Source Breakdown Voltage V(BR)DSS ID=-1mA, VGS=0V -30 - - V Drain-Source Cut-Off Current IDSS VDS=-30V, VGS=0V - - -1 μA Gate-Source Leakage Current IGSS VGS=±16V,VDS=0V - - ±10 μA Gate-Source Cut-Off Voltage VGS(off) VDS=-10V,ID=-1mA -1.2 - -2.6 V Forward Transfer Admittance |yfs| VDS=-10V,ID=-3A - 8.0 - S RDS(ON)1 ID=-1.5A,VGS=-10V - 45 - mΩ RDS(ON)2 ID=-1.0A,VGS=-4.5V - 67 - mΩ Drain-Source ON Resistance RDS(ON)3 ID=-1.0A,VGS=-4V - 76 - mΩ Input Capacity Ciss VDS=-10V,f=1MHz - 435 - pF Output Capacity Coss VDS=-10V,f=1MHz - 110 - pF Feedback capacity Crss VDS=-10V,f=1MHz - 85 - pF Turn on Delay time td(on) ID=-1A - 6 - ns Rise Time tr ID=-1A - 12 - ns Turn off Delay Time td(off) ID=-1A - 28 - ns Fall Time tf ID=-1A - 10 - ns All Gate Charge Amount Qg VDS=-15V, VGS=-10V, ID=-3A - 10 - nC Gate Source Charge Amount Qgs VDS=-15V, VGS=-10V, ID=-3A - 1.2 - nC Gate Drain Charge Amount Qgd VDS=-15V, VGS=-10V, ID=-3A - 2.2 - nC Diode Forward Voltage VSD IS=-3A, VGS=0V - -0.8 -1.2 V ・ Low On Resistance ・ Ultra High Speed Switching ・ 4V Driving ・ EU RoHS Compliant, Pb Free ETR1128-003 ● Switching ■FEATURES ■ ELECTRICAL CHARACTERISTICS ■APPLICATIONS ■ ABSOLUTE MAXIMUM RATINGS ■PRODUCT NAME ■PIN CONFIGURATION (*1)PW≦10μs,duty cycle≦1% (*2)Ceramic Board (900mm2×0.8mm) Mounting SOT-23(TOP VIEW) 1. Gate 2. Source 3. Drain * The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant. |
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